'Perfect' memory that could someday replace three types of storage gets very early prototype — SOT-MRAM combines cache, system memory, and storage into one

The Industrial Technology Research Institute (ITRI) and the Taiwan Semiconductor Manufacturing Company (TSMC) will develop a SOT-MRAM (spin-orbit-torque magnetic random access memory) array chip, the result of a joint development program first announced in 2022. Announced.

Touted as a potential replacement for STT-MRAM (Spin-Transfer Torque MRAM), the new SOT-MRAM can be used as a replacement for computing memory architectures and dense last-level embedded cache applications. There is a gender. The operating power consumption is only 1% of the previous generation's power consumption, and it is said to be faster than DRAM.

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