The Industrial Technology Research Institute (ITRI) and the Taiwan Semiconductor Manufacturing Company (TSMC) will develop a SOT-MRAM (spin-orbit-torque magnetic random access memory) array chip, the result of a joint development program first announced in 2022. Announced.
Touted as a potential replacement for STT-MRAM (Spin-Transfer Torque MRAM), the new SOT-MRAM can be used as a replacement for computing memory architectures and dense last-level embedded cache applications. There is a gender. The operating power consumption is only 1% of the previous generation's power consumption, and it is said to be faster than DRAM.
ITRI and TSMC presented a new research paper on this microelectronic component at the 2023 IEE International Electronic Devices Conference (IEDM 2023).
There are still hurdles to overcome
Dr. Shih-Chieh Chang, Director of the ITRI Electronics and Optoelectronic Systems Research Institute, said: cell. This unit cell simultaneously achieves low power consumption and high speed operation, reaching speeds of 10 nanoseconds. Additionally, integrating memory circuit design with computing can further improve overall computing performance. In the future, this technology has potential applications in high-performance computing (HPC), artificial intelligence, automotive chips, and more. ”
The rise of AI, 5G, and AIoT is driving the need for faster processing and new memory solutions that offer superior speed, stability, and energy efficiency. This breakthrough could pave the way for next-generation memory technology, but it also comes with a problem.
As Tom's Hardware points out, “Although SOT-MRAM has lower standby power than SRAM, dynamic power consumption is still quite high due to the high current required for write operations. Additionally, SOT-MRAM cells They are still larger and more difficult to manufacture than SRAM cells. As a result, while SOT-MRAM technology looks promising, it is unlikely to replace SRAM any time soon. However, for in-memory computing applications, TSMC is cost-effective. SOT-MRAM could become very meaningful if we learn how to make it well, if not right away.”